Samsung has developed the world's first prototype of 3D NAND flash memory with 900 layers, far surpassing the competition. The key lies in its Cell Multi-Bonding (CMB) technology, which bonds two 450-layer wafers to double the density. This reduces energy consumption and benefits artificial intelligence applications, where performance and efficiency are critical.
CMB: Two wafers bonded to double density 🚀
Samsung's CMB technique allows memory cells to be stacked vertically without increasing chip height. By bonding two independent 450-layer wafers, a total of 900 functional layers is achieved. This breakthrough surpasses SK hynix's 321 layers and is preparing for mass production of 400 layers. Meanwhile, China's YMTC is reducing its technical disadvantage, but still far from this milestone. Samsung was a pioneer in 2013 with the first 3D V-NAND.
YMTC looks up at 900 layers from below, but unfazed 😅
With 900 layers, Samsung has built a memory tower that would put any skyscraper to shame. Meanwhile, YMTC keeps stacking layers like someone building a house of cards against the wind. SK hynix, for its part, must be wondering if its 321-layer record was a mirage. At least, Samsung hasn't said these 900 layers can be used to make a sandwich, though technically they could.