Quantum memory twenty five times faster than DRAM arrives from Japan

Researchers from the University of Tokyo and the RIKEN CEMS center have created a magnetic memory based on quantum effects that outperforms DRAM in speed by up to 25 times. This system generates no heat and does not degrade with use, promising a remarkable advance in data storage.

cinematic engineering visualization of quantum memory chip architecture, electrons flowing through magnetic tunnel junctions at ultrafast speeds, glowing quantum spin states transitioning between layers, zero heat dissipation shown by cool blue energy paths, RIKEN CEMS laboratory setting with atomic-scale memory cells in action, photorealistic technical render, dramatic side lighting on nanostructured substrates, ultra-detailed silicon wafer with magnetic domain walls shifting during data write process, motion blur indicating 25x speed advantage over traditional DRAM, industrial precision atmosphere

Quantum technology: spin-orbit as the basis for state change 🧲

The memory uses the transfer of the electron's spin-orbit momentum to switch between states, reducing energy consumption. The device uses trimanganese stannide (Mn₃Sn), an antiferromagnet with a Kagome structure that exhibits a giant anomalous Hall effect. This allows it to respond intensely to electric current, similar to a ferromagnet, achieving faster and more wear-resistant memories.

Goodbye to the blue screen: your PC will no longer complain about the heat ❄️

With this memory, the days of waiting for the computer to load or listening to the fan like a hair dryer could be over. Now we just need manufacturers to decide to use it before the market sells us another memory that promises to be the salvation and ends up being the new standard that heats up like a radiator. At least, the bits don't get tired of working.